Presentation Information
[11a-S5-4]COD free InGaAs/GaAs high power lasers using SOI shadow mask growth
〇Akihiko Kasukawa1,2, Masakazu Arai3 (1.Taiwan Tech, 2.Yushan Fellow, 3.Miyazaki Univ.)
Keywords:
semiconductor lasers,metalorganic chemical vapor deposition,selective area growth
9xxnm high-power lasers are widely used for pumping lasers for EDFAs and industrial fiber lasers. Catastrophic optical mirror damage (COMD)-free 980nm lasers were successfully fabricated by a novel MOCVD selective area growth (SAG) technique with an SOI (Silicon-On-Insulator) shadow mask containing open and shadow regions. This method provides the in-plane energy bandgap engineering between these regions. Growth enhancement factor of 4 was realized between the opening and shadow regions, resulting in the maximum energy bandgap difference of 100meV. The fabricated laser with gain region and thinner QWs (wider bandgap) region near the facets shows both COMD-free operation and narrow far-field pattern.