Session Details

[11a-S5-1~12]3.12 Semiconductor optical devices

Fri. Sep 11, 2026 9:15 AM - 12:30 PM JST
Fri. Sep 11, 2026 12:15 AM - 3:30 AM UTC
S5 (First Year Education S Bldg.)

[11a-S5-1]EQE Increase of 290 nm UVB LED by controlling Ga composition in the AlGaN Electron Blocking Layer (EBL)

〇(D)Hamida Zia1,2, M.Nawaz Sharif1, Hiroyuki Yaguchi2, Hideki Hirayama1 (1.RIKEN Pioneering Research Institute (PRI), 2-1 Hirosawa, Wako, Saitama, Japan, 2.Saitama University, Saitama 338-8570, Japan)

[11a-S5-2]Enhanced Injection Efficiency in AlGaN-Based UVB Light-Emitting Diodes using Step-Graded Electron Blocking Layer

〇(PC)Muhammad Nawaz Sharif1, Hamida Zia1,2, Hideki Hirayama1 (1.RIKEN Japan, 2.Saitama University)

[11a-S5-3]Proposal of a polarization switching laser diode based on a two-dimensional cavity

〇Takehiro Fukushima1 (1.Okayama Pref. Univ.)

[11a-S5-4]COD free InGaAs/GaAs high power lasers using SOI shadow mask growth

〇Akihiko Kasukawa1,2, Masakazu Arai3 (1.Taiwan Tech, 2.Yushan Fellow, 3.Miyazaki Univ.)

[11a-S5-5]Active-MMI-Based SOA-Integrated DFB Laser with pn-Buried Heterostructure

〇Shun Kimura1, Yusuke Sawada1, Takayuki Miyai1, Kotaro Hoshino2, Daisuke Inoue1,2, Mitsuru Ekawa1,2, Hiroyuki Yoshinaga1, Naoki Fujiwara1 (1.SEI, 2.SEDI)

[11a-S5-6]Structure-related Properties of Multi Quantum Well via Quantum Well Intermixing for Passive Waveguide

〇Mami Takahari1, Yuta Ueda1, Gensai Tei1, Takahiko Shindo1, Makoto Shimokozono1, Katsuhiko Nishiguchi2, Fumito Nakajima1 (1.Device Innovation Center, NTT, Inc., 2.Basic Research Laboratories, NTT, Inc.)

[11a-S5-7]Thresholdless Auger Recombination Coefficient of 1. 3μm Type-II QW Structure (2)

〇Noriyuki Yokouchi1, Peter Nyakas2, He Xiao1, Akihiro Imamura3 (1.Furukawa Electric, 2.FETI, 3.FFOD)

[11a-S5-8]Investigation of interconnection between semiconductor lasers and photonic chips via photonic wire printing

〇(M1)Taisei Chiba1, Hironobu Yoshimi1, Hiroyasu Kobayashi1, Jinkwan Kwoen3, Masahiro Kakuda3, Yasuhiko Arakawa3, Satoshi Iwamoto2, Yasutomo Ota1 (1.Keio Univ., 2.RCAST The Univ. of Tokyo, 3.NanoQuine The Univ. of Tokyo)

[11a-S5-9]Design and Investigation of temperature characteristics
for 1-µm-band InGaAs/GaAs membrane DR lasers

〇Shun Ito1, Keigo Imagawa1, Yoshitaka Oiso1, Keisuke Kawahara1, Nobuhiko Nishiyama1,2 (1.Science Tokyo, 2.NEX-SECC)

[11a-S5-10]Gain Characterization in a QD-SOA with Tapered Multimode Interference Waveguide

〇(M2)Naoya Chiyo1,2, Atsushi Matsumoto2, Shinya Nakajima2, Toshimasa Umezawa2, Kouichi Akahane2, Satoshi Shinada2, Tomohiro Maeda1,2, Hideyuki Sotobayashi1 (1.Aogaku Univ., 2.NICT)

[11a-S5-11]Quadrupled Longitudinal Mode Spacing Based on Asymmetric Colliding-Pulse Mode-Locking with Highly Stacked Quantum Dots

〇Satoshi Yanase1,2, Kouichi Akahane2, Atsushi Matsumoto2, Toshimasa Umezawa2, Naokatsu Yamamoto2, Satoshi Shinada2, Tomohiro Maeda1,2, Hideyuki Sotobayashi1 (1.Aogaku Univ., 2.NICT)

[11a-S5-12]Characterization of High-Power Quantum Dot Lasers with Double Active Layer Structure

〇Haruki Maruyama1,2, Satoshi Yanase1,2, Kouichi Akahane2, Satoshi Shinada2, Atsushi Matsumoto2, Tomohiro Maeda1,2, Hideyuki Sotobayashi2 (1.Aogaku Univ., 2.NICT)