[11a-S5-1~12] 3.12 Semiconductor optical devices

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11a-S5-9] Design and Investigation of temperature characteristics
for 1-µm-band InGaAs/GaAs membrane DR lasers

〇Shun Ito¹, Keigo Imagawa¹, Yoshitaka Oiso¹, Keisuke Kawahara¹, Nobuhiko Nishiyama^1,2 (1.Science Tokyo, 2.NEX-SECC)

Keywords:

semiconductor,membrane,Laser Diode

Semiconductor membrane lasers are highly anticipated for application in future optical chiplets and on-chip optical interconnects as highly efficient, low-power-consumption directly modulated light sources. However, utilizing conventional InP-based lasers is challenging when they are placed in close proximity to electronic circuits, where ambient temperatures can exceed 100 ℃. Therefore, aiming to realize a membrane laser utilizing 1-μm-band InGaAs/GaAs, which has proven to exhibit excellent characteristics under high temperatures, we designed and analyzed a distributed reflector (DR) laser. Herein, we report our calculated results, which demonstrate favorable temperature characteristics and predict stable operation even at 120 ℃.