[11p-A13-1~9] 15.6 Group IV Compound Semiconductors (SiC)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[11p-A13-1] Wafer-scale defect characterization of 4H-SiC wafers by multimodal nondestructive measurements

〇Shunta Harada^1,2, Kosei Takahashi¹, Kota Tsujimori², Michio Kawase¹, Keisuke Seo¹, Kenta Shimamoto³, Seiya Mizutani⁴, Yuya Mizutani⁴, Seiji Mizutani⁴, Kenta Murayama⁴ (1.Nagoya Univ., 2.SSR, 3.Rigaku, 4.Mipox)

Keywords:

SiC,dislocation,X-ray topography

X線トポグラフィと偏光顕微鏡観察を組み合わせ、8インチn型4H-SiCウエハ全面の主要な貫通転位を非破壊で分類した。