The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.6 Group IV Compound Semiconductors (SiC)

[11p-A13-1~9]15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 11, 2026 2:00 PM - 4:15 PM JST
Fri. Sep 11, 2026 5:00 AM - 7:15 AM UTC
A13 (Faculty of Info. Sci. & Tech. Bldg.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[11p-A13-1]Wafer-scale defect characterization of 4H-SiC wafers by multimodal nondestructive measurements

〇Shunta Harada1,2, Kosei Takahashi1, Kota Tsujimori2, Michio Kawase1, Keisuke Seo1, Kenta Shimamoto3, Seiya Mizutani4, Yuya Mizutani4, Seiji Mizutani4, Kenta Murayama4 (1.Nagoya Univ., 2.SSR, 3.Rigaku, 4.Mipox)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[11p-A13-2]Ultra-fast Resonant-Scanning Multiphoton-Excitation Photoluminescence Imaging of SiC Enabled by Nanosecond Band-Edge Emission

〇Toji Junichi1, Takashi Watanabe1, Tomoyuki Tanikawa2 (1.NIKON Corp., 2.Meijo Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A13-3]Time-dependent dislocation dynamics simulation to clarify the contraction mechanism of basal plane dislocations near the surface in 4H-SiC

〇Atsuo Hirano1, Noboru Takahashi1, Akiyuki Takahashi1 (1.Tokyo Univ. of Sci.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[11p-A13-4]Evaluation of Shockley Stacking Fault Expansion Behavior in 4H-SiC under Repeated Cycles of Ultraviolet Irradiation and Heat Treatment

〇Hiroumi Matsui1, Takuya Morita1, Yosuke Matsushita1 (1.ITES Co., Ltd.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A13-5]Controlling point defect density in SiC through thermal oxidation prior to electron irradiation

〇(M2)Kotaro Yamanaka1, Kyota Mikami1, Tsunenobu Kimoto1, Mitsuaki Kaneko1 (1.Kyoto Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A13-6]Analysis of Local Thermal Diffusion Processes in 4H-SiC Using Laser Heterodyne Photothermal Displacement Method

〇Kouyou Harada1, Masashi Kato2, Atsuhiko Fukuyama1 (1.Univ. of Miyazaki, 2.Nagoya Inst. of Tech.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[11p-A13-7]Thickness-Dependent Photoluminescence Characteristics of RF
Magnetron-Sputtered SiC Ultrathin Films

〇Keiya Azuma1, Hiroshi Katsumata1 (1.Meiji Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A13-8]Effects of an ion implantation region on visible light transmittance in a high-purity semi-insulating SiC substrate

〇Shutaro Kitagawa1, Kyota Mikami1, Tsunenobu Kimoto1, Mitsuaki Kaneko1 (1.Kyoto Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[11p-A13-9]Formation of P+-implanted n-type layers on a V-doped semi-insulating 4H-SiC substrate and analysis of donor compensation

〇Yuki Yoshimura1, Kyota Mikami1, Tsunenobu Kimoto1, Mitsuaki Kaneko1 (1.Kyoto Univ.)
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