[11p-A13-1~9] 15.6 Group IV Compound Semiconductors (SiC)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A13-3] Time-dependent dislocation dynamics simulation to clarify the contraction mechanism of basal plane dislocations near the surface in 4H-SiC

〇Atsuo Hirano¹, Noboru Takahashi¹, Akiyuki Takahashi¹ (1.Tokyo Univ. of Sci.)

Keywords:

SiC,Dislocation,Dislocation dynamics simulation

We performed dislocation dynamics simulations considering the time evolution to clarify the contraction mechanism of BPDs near the surface in 4H-SiC, which is a crucial process in the BPD-TED conversion. The simulations enabled us to evaluate the probability of BPD contractions at realistic epitaxy timescales. Our results show that the partial dislocation pair rapidly reaches its equilibrium distance, and contraction from the equilibrium distance to the perfect dislocation takes a long time.