[11p-A13-1~9] 15.6 Group IV Compound Semiconductors (SiC)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[11p-A13-4] Evaluation of Shockley Stacking Fault Expansion Behavior in 4H-SiC under Repeated Cycles of Ultraviolet Irradiation and Heat Treatment

〇Hiroumi Matsui¹, Takuya Morita¹, Yosuke Matsushita¹ (1.ITES Co., Ltd.)

Keywords:

SiC,defect,Shockley stacking fault

The re-expansion behavior of SSFs originating from the corresponding BPDs in 4H-SiC was evaluated through repeated cycles of expansion induced by ultraviolet irradiation and contraction induced by heat treatment. No clear decrease in the irradiation threshold for SSF expansion was observed, whereas the expanded SSF area under the same irradiation condition increased with repeated expansion–contraction cycles.