[11p-A13-1~9] 15.6 Group IV Compound Semiconductors (SiC)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A13-5] Controlling point defect density in SiC through thermal oxidation prior to electron irradiation

〇(M2)Kotaro Yamanaka¹, Kyota Mikami¹, Tsunenobu Kimoto¹, Mitsuaki Kaneko¹ (1.Kyoto Univ.)

Keywords:

defect characterization,SiC,DLTS

Point defects in SiC have attracted considerable attention in recent years for quantum applications, and controlling their density is an important challenge. In this study, the authors investigated thermal oxidation prior to electron irradiation as a novel approach for controlling the density of intrinsic point defects. Deep level transient spectroscopy (DLTS) measurements revealed that samples subjected to thermal oxidation before electron irradiation exhibited a reduction in the density of the carbon-vacancy-related level and an increase in the density of the carbon-interstitial-related level. These results support the potential of this process as a method for controlling point defect densities.