[11p-A21-1~12] 13.7 Compound and power devices, process technology and characterization

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[11p-A21-10] Small-Signal Characteristics of Diamond Modulation-Doped FET with f_MAX = 54 GHz

Niloy Chandra Saha¹, Masanori Eguchi², Atsushi Tomiki³, 〇Makoto Kasu^1,4 (1.Diamond Semiconductor Research Center, Saga Univ., 2.Synchrotron Research Center, Saga Univ., 3.JAXA Institute of Space and Astronautical Science, 4.Diamond Semiconductor Co., Ltd.)

Keywords:

diamond,RF power device

We proposed and fabricate modulation-doped diamond FET, which shows power-gain cut-off frequency (fMAX) of 54 GHz in small-signal characteristics.