[11p-A21-1~12] 13.7 Compound and power devices, process technology and characterization

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[11p-A21-12] Thermal-Induced Chemical Structural Evolution at Diamond/Silicon Interfaces Fabricated by Surface Activated Bonding

〇Yutaka Ohno¹, Hideto Yoshida², Jianbo Liang³, Koji Inoue⁴, Naoteru Shigekawa³ (1.TCEM, Tohoku Univ., 2.SANKEN, Univ. Osaka, 3.GSE, OMU, 4.IMR, Tohoku Univ.)

Keywords:

Surface activated bonding,Diamond

The chemical structural changes induced by thermal annealing at diamond/Silicon (Si) interfaces fabricated by surface activated bonding (SAB) were investigated in detail using HR-TEM, STEM-EDS, and STEM-EELS. During the surface activation process via argon atom irradiation, the substrate surfaces became amorphized. Subsequently, the bonding process induced interdiffusion across the interface, resulting in the formation of an amorphous layer consisting of a mixture of carbon and silicon. However, thermal annealing at temperatures of 900 °C and above induced recrystallization starting from the Si crystal/amorphous interface, which demonstrated the formation of cubic silicon carbide (3C-SiC).