[11p-A21-1~12] 13.7 Compound and power devices, process technology and characterization

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A21-2] Ga₂O₃ MOS Capacitors with Si-Implanted AlO_x Insulators (2)

〇Keita Shoji¹, Daisuke Matsuo², Shun Konno², Kosuke Usui², Kohei Tanaka², Masataka Higashiwaki¹ (1.Osaka Metropolitan Univ., 2.Nissin Ion Equipment)

Keywords:

MOS capacitors,ion implantation,Ga2O3

In this study, we characterized electrical properties and interface state densities (D_it) of AlO_x/n-Ga₂O₃ MOS diodes, in which Si ions were implanted into an AlO_x insulating film at three different doses. As a result, a negative shift in the flat-band voltage was observed with increasing the implantation dose, which is attributed to positive fixed charges in the AlO_x film induced by the high-density Si implantation. In addition, the interface state density was relatively low in the shallow energy region, suggesting that the Si-ion implantation has a little influence on the AlO_x/Ga₂O₃ interface states.