[11p-A21-1~12] 13.7 Compound and power devices, process technology and characterization

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A21-5] Fabrication and Electrical Characteristics of Self-Aligned Gate β-Ga₂O₃ MOSFET with Refractory Electrode

〇Kazuaki Yoshiura¹, Yusuke Teramura¹, Jun Morihara¹, Yoshiki Iba², Junya Yoshinaga^2,3, Yoshinao Kumagai², Takuya Tsutsumi¹, Masataka Higashiwaki¹ (1.Osaka Metropolitan Univ., 2.Tokyo Univ. of Agric. and Tech., 3.Nippon Sanso Corporation)

Keywords:

gallium oxide,FET,self-aligned gate

Lateral Ga₂O₃ FETs are promising candidates for next-generation high-speed and high-power devices. In this work, a Ga₂O₃ FET with a SiO₂ gate dielectric and a self-aligned gate (SAG) structure was fabricated and electrically characterized. The results indicate that the SAG structure effectively reduces parasitic resistance, while MOS interface stabilization during activation annealing is critical for device fabrication.