[11p-A21-1~12] 13.7 Compound and power devices, process technology and characterization

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A21-7] Effects of Post-Metallization Annealing on Interface Properties

〇Sora Kawai¹, Masahiro Hara¹, Takuma Kobayashi¹, Heiji Watanabe¹ (1.U Osaka)

Keywords:

Ga2O3,interface state density,MOS