[11p-A21-1~12] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-A21-9] 3002 h Stable DC Operation of Diamond FETs with Surface Passivation

〇(M2)Yoshiki Muta¹, Niloy Chandra Saha¹, Masanori Eguchi², Makoto Kasu^1,3 (1.Diamond Semiconductor Research Center, Saga Univ., 2.Synchrotron Light Application Center, Saga Univ., 3.Diamond Semiconductor Co., Ltd.)

Keywords:

Diamond

Diamond is a semiconductor with a bandgap of 5.47 eV, and it is anticipated as a next-generation power semiconductor for high-power and high-frequency applications. The practical application of diamond semiconductors requires the establishment of high durability and operational stability during continuous operation. We report that we have achieved stable continuous operation for 3,002 hours using a FET with surface passivation.