[11p-B21-1~9] Atomic Layer Process (ALP) analysis and application technologies (4)

2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[11p-B21-3] Evaluation of the Effects of Oxidants on Film Composition in ALD Alumina Deposition

〇Yasutaka Matsuo¹, Xu Shi^1,3, Takashi Endo^1,3, Keisuke Nakamura³, Akihiro Nishida^1,2 (1.RIES, Hokkaido Univ., 2.ADEKA Corp., 3.I3, Hokkaido Univ.)

Keywords:

Atomic layer deposition,Oxide Thin Films,nanofabrication

This presentation investigates the effects of oxidants (water and ozone), deposition temperature, and carrier gases on the film quality and composition of ALD-grown alumina films using TMA as the precursor. Through characterization techniques such as XPS, SIMS, and XRR, we evaluate and analyze how the residual hydrogen (H) content in the films—which varies significantly depending on the oxidant—affects their electrical and thermal conductivity properties. Furthermore, this talk will introduce the R&D support initiatives utilizing atomic layer deposition systems provided by Hokkaido University as part of the ARIM project.