Session Details
[11p-B21-1~9]Atomic Layer Process (ALP) analysis and application technologies (4)
Fri. Sep 11, 2026 1:00 PM - 4:35 PM JST
Fri. Sep 11, 2026 4:00 AM - 7:35 AM UTC
Fri. Sep 11, 2026 4:00 AM - 7:35 AM UTC
B21 (Faculty of Engineering B Block)
[11p-B21-1]Expectations for Atomic Layer Process Technology from the Viewpoint of a Semiconductor Device Manufacturer
〇Noriyuki Asami1, Yukihisa Nakao1, Yukihisa Wada1, Mitsunari Sukekawa1, Yuichiro Sasaki1, Shintaro Arai1 (1.Rapidus Corporation)
[11p-B21-2]Opening Next-Gen Semiconductors with Nano-Layers
〇Hiroshi Ashihara1 (1.KOKUSAI ELECTRIC)
[11p-B21-3]Evaluation of the Effects of Oxidants on Film Composition in ALD Alumina Deposition
〇Yasutaka Matsuo1, Xu Shi1,3, Takashi Endo1,3, Keisuke Nakamura3, Akihiro Nishida1,2 (1.RIES, Hokkaido Univ., 2.ADEKA Corp., 3.I3, Hokkaido Univ.)
[11p-B21-4]Understanding and Control of Thin-Film Formation via Plasma Process Informatics
〇Kunihiro Kamataki1, Sukma Fitriani2, Kazuki Nagamine1,2, Masaharu Shiratani1 (1.Kyushu Univ. ISEE., 2.Kyushu Univ. IMI.)
[11p-B21-5]Integration of Machine-Learning Force Fields with the GRRM Automated Reaction Path Search Program for Application to Complex Systems
〇Satoshi Maeda1 (1.Hokkaido Univ.)
[11p-B21-6]Neural Network Potential Molecular Dynamics Study of Hydrogen Radical Reduction and Penetration Behaviors in Nb PEALD
〇Noboru Sato1, Tamaoki Naoki1, Tsukune Atsuhiro1, Shimogaki Yukihiro1 (1.Tokyo Univ)
[11p-B21-7]Detailed Chemical Kinetics Modeling of the ALD Mo Surface Reaction
〇Taiki Kato1, Hiroki Yamada1, Kenichi Uki1, Kosuke Yamamoto1, Toshihiko Jo1, Takeo Nakano1 (1.Tokyo Electron)
[11p-B21-8]Computational study of precursors for Mo-ALD using MLIPs
〇Naoki Tamaoki1, Sousa Nagai1, Noboru Sato1, Atsuhiro Tsukuno1, Yukihiro Shimogaki1 (1.Tokyo Univ.)
[11p-B21-9]Closing
〇Takeshi Momose1 (1.Kumamoto Univ.)
