[11p-B21-1~9] Atomic Layer Process (ALP) analysis and application technologies (4)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[11p-B21-7] Detailed Chemical Kinetics Modeling of the ALD Mo Surface Reaction

〇Taiki Kato¹, Hiroki Yamada¹, Kenichi Uki¹, Kosuke Yamamoto¹, Toshihiko Jo¹, Takeo Nakano¹ (1.Tokyo Electron)

Keywords:

Semiconductor,Atomic Layer Deposition,ALD,Chemical Kinetics Modeling

Molybdenum thin films have excellent physical properties, such as low electrical resistivity and high thermal conductivity, and have therefore been known in semiconductor manufacturing processes in recent years as electrode and diffusion-barrier metals. In this study, we developed a detailed chemical kinetics model for a molybdenum atomic layer deposition (ALD) process in which MoO₂Cl₂ and H₂ gas are supplied alternately. The chemical kinetics model constructed from reaction path searching and reactive MD simulations quantitatively reproduced the experimentally measured ALD Mo deposition rate.