Presentation Information
[11p-E201-2]Influence of Purge Time Control in DPDS on Orthorhombic Phase Stabilization in Y-Doped HfO2 Thin Films
〇Kota Udagawa1, Takahiro Tsukamoto1, Hideo Isshiki1 (1.Univ. of Electro-Comm)
Keywords:
ferroelectric thin film,hafnium dioxide,crystal growth
To clarify the stabilization mechanism of the orthorhombic phase (O-phase) in HfO2 thin films, Y-doped HfO2 thin films were fabricated using the DPDS method, and the effects of purge time on crystal phase formation and oxygen vacancy formation were investigated. As a result, the O-phase fraction decreased and monoclinic phase formation became dominant with increasing purge time, whereas oxygen vacancy-related components increased. These results suggest that O-phase stabilization cannot be explained solely by the amount of oxygen vacancies, and that control of the growth process, including oxidation reactions and structural relaxation via purge time, plays an important role.