The 87th JSAP Autumn Meeting 2026
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Oral presentationCS Code-sharing session : 【CS.6】Code-sharing session of 6.1&13.3&13.5

[11p-E201-1~15]CS.6 Code-sharing session of 6.1&13.3&13.5

Fri. Sep 11, 2026 1:00 PM - 5:00 PM JST
Fri. Sep 11, 2026 4:00 AM - 8:00 AM UTC
E201 (First Year Education Bld. E Block)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[11p-E201-1]Non-heating Synthesis of (HfO2)(ZrO2) Thin Films by Digitally Processed DC Sputtering

〇Hideo Isshiki1, Satoshi Fujiya1, Itsuki Hino1, Yudai Katsura1, Kota Udagawa1, Takahiro Tsukamoto1 (1.Univ. of Electro-Comm.)
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[11p-E201-2]Influence of Purge Time Control in DPDS on Orthorhombic Phase Stabilization in Y-Doped HfO2 Thin Films

〇Kota Udagawa1, Takahiro Tsukamoto1, Hideo Isshiki1 (1.Univ. of Electro-Comm)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[11p-E201-3]Deposition of ZrO2-based ferroelectric thick films by sputtering method and their characterization

〇Hayate Ogasawara1, Yutaro Tsuchiya1, Syunshi Imamura1, Kazuki Okamoto1, Yukari Inoue2, Hiroshi Funakubo1 (1.Science Tokyo, 2.TDK Corporation)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[11p-E201-4]Improvement of Ferroelectric Properties in Hf0.5Zr0.5O2 Capacitors Using Laminated ITO Electrodes

〇Hiroyuki Yamada1, Takuro Nagai2, Jun Usami1, Yoshikiyo Toyosaki1, Akihito Sawa1 (1.AIST, 2.NIMS)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[11p-E201-5]Ferroelectric properties of spacer-free HfO2-based ferroelectric Y0.06Nb0.06Hf0.88O2

〇Shutaro Asanuma1, Shinji Migita1, Hiroyuki Ota1, Yukinori Morita1, Shogo Hatayama1 (1.SFRC AIST)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[11p-E201-6]Investigation of oxygen migration in Layered HfO2 by application of cyclic electric field

〇Seiyo Yoshida1,2, Takao Shimizu2, Yuka Takagi1, Isao Sakaguchi2 (1.Tokyo Univ. of Sci., 2.NIMS)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-E201-7]Machine-Learning-Potential Study of Electric-Field-Induced Transition from Tetragonal HfO2 to Ferroelectric Orthorhombic Phase

〇(M1)Hiroki Nomura1, Yusuke Nishimura1, Junpei Ohba1, Takanobu Watanabe1 (1.Waseda Univ.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-E201-8]Fabrication and interface characterization of HfO2 on β-Ga2O3 by confined-space ALD

〇Shodai Ata1, Katsuhiro Furukawa1, Takeshi Yoshimura1,2, Norifumi Fujimura1 (1.Osaka Metro. Univ., 2.Toyohashi Univ. Tech.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[11p-E201-9]Variable-capacitors using CSD-derived Ce:HfO2 ferroelectric/oxide semiconductor stacked structures

〇Takaaki Miyasako1, Tadasu Hosokura1, Eisuke Tokumitsu2 (1.Murata Manufacturing Co., Ltd., 2.Japan Advanced Inst. of Sci. and Tech.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-E201-10]Selective Detection of the Orthorhombic Phase in HfxZr1-xO2 Thin Films by Far-Infrared Spectroscopy

〇Rina Takahisa1, Atsushi Tamura1, Takashi Onaya2, Koji Kita1 (1.GSFS, Univ. of Tokyo, 2.NIMS)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[11p-E201-11]Revealing the Origin of Fatigue in HfO2-Based Ferroelectric Films: The Critical Role of Imprint

〇(DC)Zhenhong Liu1, Mitsuru Takenaka1, Shinichi Takagi1,2, Kasidit Toprasertpong1 (1.Univ. Tokyo, 2.Teikyo Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-E201-12]Effective Electron Mobility Degradation in Si FETs induced by HfxZr1-xO2 Polarization Switching

〇Hiroyuki Matsukawa1, Mitsuru Takenaka1, Shinichi Takagi1,2, Kasidit Toprasertpong1 (1.Univ.Tokyo, 2.Teikyo Univ.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[11p-E201-13]Internal electric field distribution in MFIM capacitors with ultra-thin HfO2

〇Akira Toriumi1, Shinji Migita2 (1.None, 2.AIST)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[11p-E201-14]Consideration of critical factors for suppressing endurance degradation caused by electric-field-induced interface reactions in HfO2-based ferroelectric devices

〇Takashi Onaya1, Toshihide Nabatame1, Takahiro Nagata1, Tsukagoshi Kazuhito1 (1.NIMS)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[11p-E201-15]Generation of anomalous PVs and their recovery in undoped HfO2 MFM capacitors

〇Yukinori Morita1, Shutaro Asanuma1, Hiroyuki Ota1, Shinji Migita1 (1.AIST)
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