Presentation Information
[11p-E201-3]Deposition of ZrO2-based ferroelectric thick films by sputtering method and their characterization
〇Hayate Ogasawara1, Yutaro Tsuchiya1, Syunshi Imamura1, Kazuki Okamoto1, Yukari Inoue2, Hiroshi Funakubo1 (1.Science Tokyo, 2.TDK Corporation)
Keywords:
ferroelectric material,sputtering method,thin film
Ferroelectric HfO2-based oxides have attracted considerable attention for applications in ferroelectric memories and piezoelectric MEMS devices. In particular, ZrO2 has the same fluorite crystal structure as HfO2 while offering lower material costs, making it a promising material for industrial applications. However, the formation mechanism of the ferroelectric orthorhombic phase in films deposited without substrate heating has not yet been fully understood. In this study, ZrO2-based ferroelectric thick films were deposited by sputtering without substrate heating, and the effects of deposition conditions on their crystal structure and electrical properties were investigated.