[11p-E201-1~15] CS.6 Code-sharing session of 6.1&13.3&13.5

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[11p-E201-6] Investigation of oxygen migration in Layered HfO₂ by application of cyclic electric field

〇Seiyo Yoshida^1,2, Takao Shimizu², Yuka Takagi¹, Isao Sakaguchi² (1.Tokyo Univ. of Sci., 2.NIMS)

Keywords:

HfO2 thin films,oxygen-18 isotope,Nd-doped

In HfO₂-based ferroelectrics, the wake-up and fatigue effects have been suggested to be related to the migration of oxygen vacancies. In this study, laminated thin films containing an ¹⁸O-enriched layer were fabricated, and the migration of oxygen and oxygen vacancies induced by electric-field cycling was investigated using secondary ion mass spectrometry (SIMS). The results showed that the ¹⁸O concentration near the film surface decreased and migrated toward the interior of the film with increasing numbers of electric-field cycles, suggesting a correlation with oxygen-vacancy migration.