[11p-E201-1~15] CS.6 Code-sharing session of 6.1&13.3&13.5

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-E201-8] Fabrication and interface characterization of HfO₂ on β-Ga₂O₃ by confined-space ALD

〇Shodai Ata¹, Katsuhiro Furukawa¹, Takeshi Yoshimura^1,2, Norifumi Fujimura¹ (1.Osaka Metro. Univ., 2.Toyohashi Univ. Tech.)

Keywords:

HfO2,Ga2O3,ALD