Presentation Information
[11p-E201-9]Variable-capacitors using CSD-derived Ce:HfO2 ferroelectric/oxide semiconductor stacked structures
〇Takaaki Miyasako1, Tadasu Hosokura1, Eisuke Tokumitsu2 (1.Murata Manufacturing Co., Ltd., 2.Japan Advanced Inst. of Sci. and Tech.)
Keywords:
HfO2-based ferroelectric,Oxide semiconductor,Variable capacitor
In this study, we propose oxide-based variable-capacitors that achieves a large capacitance modulation using a large charge controllability induced by ferroelectric films.
The variable capacitors (FeV-cap) using CSD-derived Ce:HfO2-gate/ITO-channel FETs exhibited abrupt capacitance switching (CON/COFF ~104) with ferroelectric hysteresis. In addition, the MFS capacitors using Ce:HfO2/ITO stack structures showed continuous capacitance modulation (CON/COFF ~4.0) under a ±8 V bias by controlling the depletion capacitance. The presentation will also discuss operating behaviors including high-frequency characteristics and carrier-concentration dependence.
The variable capacitors (FeV-cap) using CSD-derived Ce:HfO2-gate/ITO-channel FETs exhibited abrupt capacitance switching (CON/COFF ~104) with ferroelectric hysteresis. In addition, the MFS capacitors using Ce:HfO2/ITO stack structures showed continuous capacitance modulation (CON/COFF ~4.0) under a ±8 V bias by controlling the depletion capacitance. The presentation will also discuss operating behaviors including high-frequency characteristics and carrier-concentration dependence.