[11p-E301-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[11p-E301-10] Effects of Al Doping Concentration on the Properties of AZO Thin Films Prepared by RF Reactive Co-Sputtering Using a Zn Target

〇Toshitaka Hayashi¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

Keywords:

AZO,Zn target,Doping