[11p-E301-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[11p-E301-11] Suppressin of Excessive Reduction via Capping Layer for SnO Formation from SnO₂

〇Shion Kawasaki¹, Shin Yoshikazu¹, Aikawa Shinya¹ (1.Kogakuin Univ)

Keywords:

Metal Oxide,Capping Layer