[11p-E301-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[11p-E301-4] Effect of AlO_x Gate Dielectric Thinning on Bias Stability Improvement in InO_x FETs

〇(M2)Kazuki Ishiyama^1,2, Chen Chia-Tsong², Toshifumi Irisawa², Kasidit Toprasertpong³, Tatsuro Maeda² (1.Nihon univ., 2.AIST, 3.Tokyo univ.)

Keywords:

oxide semiconductor,TFT,Reliability