[11p-E301-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[11p-E301-6] High-Temperature Operation and Hydrogen Gas Response of Amorphous Gallium Oxide Thin-Film Transistors

〇Rio Oshita¹, Keisuke Ide¹, Takayoshi Katase^1,2, Hidenori Hiramatsu^1,2, Toshio Kamiya¹ (1.MDXES, Science Tokyo, 2.MSL, Science Tokyo)

Keywords:

oxide semiconductor

We fabricated amorphous gallium oxide thin-film transistor by using the RF magnetron sputtering. The temperature dependence of the transfer characteristics was evaluated over a range from room temperature to 400 Celsius, confirming changes in the turn on voltage and the device performance at elevated temperatures. In addition, the transfer characteristics were measured at 250 Celsius under a hydorogen gas atmosphere, and the feasibililty of application as a hydrogen gas sensor was investigated.