[11p-E301-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[11p-E301-9] Effect of Ar:N₂:O₂ Flow Rate Ratio on the Electrical Properties of Ag, N-Codoped ZnO Thin Films

〇Shu Yokoyama¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

Keywords:

ZnO,p-type,doping