[11p-E308-1~10] 17.2 Fundamental properties

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[11p-E308-8] Comparison of work function of single-layer MoS₂ and band offset with oxides in various references

〇Michiko Yoshitake¹, Takahiro Nagata¹ (1.NIMS)

Keywords:

gate dielectric films,work function,band offset

Two-dimensional materials are a good candidate for transistor material with ultra-thin channel layer. Among them, monolayer MoS2 is expected for practical use for n-channel material because of realization of high-quality large-area formation by MOCVD. Here, work function and band offset values from various references are curated and reviewed considering the difference in material fabrication and measurement methods.