Presentation Information
[11p-E308-9]Study of Structural Changes at the Single-Layer MoS2/Sapphire Interface Using Ambient Pressure Hard X-ray Photoelectron Spectroscopy with Hydrogen Gas
〇Takahiro Nagata1, Yoshiki Sakuma1, Ibrahima Gueye2, Yasumasa Takagi2, Masaaki Kobata3, Tatsuo Fukuda3, Jun Nara1, Juiteng Chang4, Tomonori Nishimura4, Kaito Kanahashi4, Kosuke Nagashio4 (1.NIMS, 2.JASRI, 3.JAEA, 4.The Univ. of Tokyo)
Keywords:
Molybdenum disulfide,Two-dimensional semiconductor,hard X-ray photoelectron spectroscopy
We present the findings of our investigation into changes and stability at the MoS2/sapphire interface, with a focus on the impact of hydrogen gas annealing at 400oC on the on-off operation of top-gate transistors with single-layer MoS2 grown directly on sapphire substrates via wafer-scale MOCVD. The study was primarily conducted using ambient pressure hard X-ray photoelectron spectroscopy with hydrogen gas under heating conditions.