[11p-N101-1~8] 15.4 III-V-group nitride crystals

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[11p-N101-2] Flat semipolar AlN(10-13) epilayer growth and high-quality semipolar AlGaN/AlN superlattice fabrication by MOCVD

〇Xu-Qiang Shen¹, Kazutoshi Kojima¹ (1.AIST)

Keywords:

AlN

We present the MOCVD growth of semipolar AlN (10-13) epilayer and AlGaN/AlN superlattice structure on the AFHT-MOCVD-grown AlN (10-13) templates. It is found that N2 carrier gas, instead of H2 gas, is necessary to obtain flat AlN(10-13) epilayer surface morphology in the MOCVD growth. Well-ordered AlGaN/AlN superlattice structure with flat and abrupt interface is successfully fabricated by the optimised growth conditions.