[11p-N101-1~8] 15.4 III-V-group nitride crystals | The 87th JSAP Autumn Meeting 2026

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[11p-N101-1~8]15.4 III-V-group nitride crystals

Fri. Sep 11, 2026 1:30 PM - 3:45 PM JST
Fri. Sep 11, 2026 4:30 AM - 6:45 AM UTC

N101 (First Year Education Bld. N Block)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[11p-N101-1]Growth of AlN on μPSS by high-temperature MOVPE growth

〇(D)Yuto Matsubara¹, Koki Fujii¹, Yukiya Hayashi¹, Yuki Kuwahara¹, Soki Shimizu¹, Soichiro Iseki¹, Yuusuke Takashima^1,2, Yoshiki Naoi^1,2, Kentaro Nagamatsu^1,2,3 (1.Faculty of Science and Engineering, Tokushima Univ., 2.pLED, Tokushima Univ, 3.IPHF, Tokushima Univ.)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[11p-N101-2]Flat semipolar AlN(10-13) epilayer growth and high-quality semipolar AlGaN/AlN superlattice fabrication by MOCVD

〇Xu-Qiang Shen¹, Kazutoshi Kojima¹ (1.AIST)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[11p-N101-3]Evaluation of Ⅴ/Ⅲ ratio dependence of BGaN growth by using MOVPE

〇ryohei kudou¹, Yoku Inoue^1,2, Takayuki Nakano^1,2,3 (1.Shizuoka Univ., 2.Shizuoka Univ. Eng., 3.R. I. E. Shizuoka Univ.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-N101-4]Investigation of crystal growth of buffer layer and underlayer on lattice-controlled ScAlMgO₄ substrates

〇(M2)Ai Sakakibara¹, Minori Kinoshita¹, Ritsuki Ninomiya¹, Yuki Oba¹, Koichi Naniwae², Atsushi Suzuki², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Makoto Matsukura³, Takahiro Kojima³ (1.Meijo Univ., 2.E&E Evolution Ltd., 3.OXIDE Corp.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[11p-N101-5]Analysis of Mn Segregation in Ga and N-polar GaN on Mn-Doped GaN Substrates

〇Shigeki Yoshida¹, Maui Hino¹, Isao Makabe¹, Kozo Makiyama¹, Junji Kotani¹, Ken Nakata¹ (1.Sumitomo Electric Indsutries, Ltd.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-N101-6]Evaluation of Mg Segregation in Bottom Tunnel Junction LEDs Using X-ray Diffraction

〇Shoma Fukakusa¹, Kazuki Osada¹, Rita Higashi¹, Satoshi Yamaguchi¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[11p-N101-7]Analysis of growth evolution of 3D GaN microstructures composed of unstable crystal planes

Yohei Kawamoto¹, 〇Yoshinobu Matsuda¹, Mitsuru Funato¹ (1.Kyoto Univ.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[11p-N101-8]Improvement of surface morphology and electrical properties of N-polar GaN/AlGaN/AlN HEMT structures by TMI supply

〇Haruki Danbata¹, Aina Hiyama Zazuli¹, Amane Hayashiuchi¹, Kei Sunai¹, Haruka Tokumoto¹, Satoshi Kurai¹, Narihito Okada¹ (1.Yamaguchi Univ.)

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