[11p-N101-1~8] 15.4 III-V-group nitride crystals

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[11p-N101-3] Evaluation of Ⅴ/Ⅲ ratio dependence of BGaN growth by using MOVPE

〇ryohei kudou¹, Yoku Inoue^1,2, Takayuki Nakano^1,2,3 (1.Shizuoka Univ., 2.Shizuoka Univ. Eng., 3.R. I. E. Shizuoka Univ.)

Keywords:

BGaN,Semiconductor,Neutron detector