[11p-N101-1~8] 15.4 III-V-group nitride crystals

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-N101-4] Investigation of crystal growth of buffer layer and underlayer on lattice-controlled ScAlMgO₄ substrates

〇(M2)Ai Sakakibara¹, Minori Kinoshita¹, Ritsuki Ninomiya¹, Yuki Oba¹, Koichi Naniwae², Atsushi Suzuki², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Makoto Matsukura³, Takahiro Kojima³ (1.Meijo Univ., 2.E&E Evolution Ltd., 3.OXIDE Corp.)

Keywords:

epitaxial growth

This study aimed to improve the crystallinity of a GaInN underlayer on a lattice-controlled ScAlMgO₄ substrate lattice-matched with Ga_0.78In_0.22N by comparing AlN, AlInN, and AlN+AlInN buffer layers. The results showed that the AlInN buffer layer exhibited the best crystallinity. Furthermore, the insertion of an AlN-cap layer reduced the ω-scan full width at half maximum by approximately 1500 arcsecs, suggesting the possibility of improved crystallinity through suppression of thermal decomposition during heating.