[11p-N101-1~8] 15.4 III-V-group nitride crystals

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[11p-N101-8] Improvement of surface morphology and electrical properties of N-polar GaN/AlGaN/AlN HEMT structures by TMI supply

〇Haruki Danbata¹, Aina Hiyama Zazuli¹, Amane Hayashiuchi¹, Kei Sunai¹, Haruka Tokumoto¹, Satoshi Kurai¹, Narihito Okada¹ (1.Yamaguchi Univ.)

Keywords:

semiconductor,MOVPE,N-polar AlN

In this study, TMI preflow before GaN growth and TMI supply during GaN growth were introduced for N-polar GaN/AlGaN/AlN HEMTs to investigate improvements in surface flatness and electrical properties. As a result, the RMS roughness was reduced from 2.23 nm to 0.67 nm, and the sheet resistance was improved from approximately 4.9 x 10⁴ Ω/sq. to approximately 6.96 x 10³ Ω/sq.