[11p-N304-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[11p-N304-1] Metal work function on semiconductors (III)

〇Akira Toriumi¹, Tomonori Nishimura² (1.None, 2.Univ. Tokyo)

Keywords:

Schottky barrier formation,Fermi level pinning

We would like to present a new view on the Schottly barrier formation mechanism at metal/semiconductor interface.