[11p-N304-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[11p-N304-11] Heat Balance Analysis of Si Wafer Heating in a Microwave Cavity

〇Satoshi Fujii^1,2, Hanae Yoshida¹, Togo Yoshikawa¹, Masahiko Ogura², Makino Toshiharu², Hiromitsu Kato², Akira Uedono³ (1.N.I.T, Okinawa Col, 2.AIST, 3.Tsukuba Univ.)

Keywords:

Microwave annealing,semiconductor,Minimal fab.

Precise control of electron and hole concentrations at high levels is essential for advancing Si-based MOSFET logic devices toward the 2 nm technology node. Selective and rapid thermal processes are required for forming highly activated layers, and microwave (MW) annealing is a promising candidate due to its ability to activate dopants while suppressing diffusion. However, insufficient understanding of MW heating mechanisms and limited energy coupling to the Si wafer have hindered its adoption in mass-production environments. Our previous studies demonstrated non-thermal carrier-driven heating effects, yet conventional electric-field-mode MW annealing yielded inadequate wafer temperatures due to extremely low coupling coefficients. In this work, we developed a novel MW absorber consisting of a boron-doped epitaxial layer on a single-crystal diamond substrate. This absorber significantly enhances energy transfer to the Si wafer, enabling efficient heating. We report the resulting thermal behavior and detailed energy-balance analysis.