[11p-N304-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[11p-N304-2] Oxygen-induced changes in contact properties at the AlSi/Si substrate interface and restoration of ohmic properties by heat treatment.

〇Shinji Kimura¹, Morimitsu Tanaka¹, Hiroshi Inagawa¹, Seiji Muranaka¹ (1.Renesas)

Keywords:

Metal/Si interface,ohmic contact,heat treatment

The effects of oxygen at the AlSi/Si interface and the recovery of contact properties by heat treatment were evaluated. Volatile components derived from polyimide increase interfacial oxygen, worsening contact resistance. On the other hand, heat treatment promotes reduction of the oxide film and elemental diffusion, increasing the direct contact area between the Al and Si substrates, which locally restores ohmic properties and improves electrical properties.