[11p-N304-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[11p-N304-4] Ultra-low Schottky barrier height exhibited in CaGe₂/n-Ge(111) contact

〇Shigehisa Shibayama¹, Ryoma Yukitake¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:

Ge,CaGe2,Contact