Presentation Information
[11p-N304-8]Investigation of a Method for Extracting Candidate Defective Regions in TSV Cross Sections Based on Analysis of IR-OBIRCH Measurement Data
〇Yujiro Takehara1, Naoki Mizutani2, Takurou Kouno3, Yasuo Terasawa3, Fumito Imura4, Ichiro Akai5, Toru Aonishi6, Takeshi Hashishin2 (1.GSST, Kumamoto Univ., 2.FAST, Kumamoto Univ., 3.NIDEK Co., Ltd., 4.Hundred Semiconductors Inc., 5.IINA, Kumamoto Univ., 6.GSFS, Univ. of Tokyo.)
Keywords:
Through-Silicon Via (TSV),IR-OBIRCH method,Minimal Fab
IR-OBIRCH images of TSV cross sections in three-dimensional integrated semiconductor devices contain structure-induced signal variations and noise, making it difficult to distinguish defect-related responses.
In this study, image characteristics of the acquired data were quantified, followed by noise reduction, extraction of potential defect regions, and classification of localized responses. An analytical procedure was investigated to reproducibly and objectively identify locations near TSVs that may be associated with defects or leakage.
This presentation reports the proposed analysis strategy and the results of its evaluation.
In this study, image characteristics of the acquired data were quantified, followed by noise reduction, extraction of potential defect regions, and classification of localized responses. An analytical procedure was investigated to reproducibly and objectively identify locations near TSVs that may be associated with defects or leakage.
This presentation reports the proposed analysis strategy and the results of its evaluation.