[8a-A21-1~10] 13.7 Compound and power devices, process technology and characterization

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[8a-A21-8] TCAD analysis of forward current–voltage characteristics for GaN vertical JBS diodes to evaluate drift layer electron mobility

〇Kazuki Kitagawa¹, Tsutomu Uesugi², Masahiro Horita^1,2, Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

Keywords:

Gallium Nitride,electron mobility,vertical JBS diodes