The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[8a-A21-1~10]13.7 Compound and power devices, process technology and characterization

Tue. Sep 8, 2026 9:00 AM - 11:45 AM JST
Tue. Sep 8, 2026 12:00 AM - 2:45 AM UTC
A21 (Faculty of Info. Sci. & Tech. Bldg.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[8a-A21-1]Development of Silver Nanoparticle-Based Low-Temperature Sintering Materials Below 100°C

〇satoshi morinaga1, Shinichi Yoda1, Yukiya Shiraishi2, Mkoto Tokuda2 (1.kyoseki Co.,Ltd, 2.Kumamoto University)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A21-2]Environmental Reliability Evaluation of Sintered Silver bonding on Bi2Te3-Based Compound Semiconductors

〇(M1)HINATA GOHARA1, HAZIME TSUZIYOKO1, AKIHIRO KATSURA1, NAOKI HAMADA1, OTOYA OKANISHI1, YUKIKO HIROSE1, TOHRU SUGAHARA1 (1.Kyoto Inst. Tech.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[8a-A21-3]Local Thermal Properties of Mg2Si Synthesized from PV Modules Investigated by Laser Heterodyne Photothermal Displacement Method

〇Sotaro Hashimoto1, Haruhiko Udono2, Takashi Itoh3, Noritaka Usami3, Atsuhiko Fukuyama1 (1.Miyazaki Univ., 2.Ibaraki Univ., 3.Nagoya Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[8a-A21-4]Quantitative analysis of parasitic overlap capacitance of 60-nm InP-based HEMT

〇Taro Sasaki1, Hiroki Sugiyama1, Takuya Hoshi1, Yuki Yoshiya1, Shiro Ozaki1, Fumito Nakajima1 (1.Device Technology Labs., NTT, Inc.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A21-5]Electrochemical Impedance Spectroscopy of AlGaN/GaN Heterostructures under Photoexcitation and Bias Conditions

〇Enku Takahashi1, Satoaki akazawa1, Kazuhide Kumakura1, Yoshitaka Taniyasu2, Taketomo Sato1 (1.RCIQE, Hokkaido Univ., 2.NTT BRL)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A21-6]Photoelectrochemical etching of high-Al-composition AlxGa1-xN layers grown on AlN channel layers

〇Satoaki Akazawa1, Enku Takahashi1, Kazuhide Kumakura1, Masanobu Hiroki2, Yoshitaka Taniyasu2, Kazuyuki Hirama2, Taketomo Sato1 (1.RCIQE, Hokkaido Univ., 2.NTT BRL)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A21-7]Impact of a Comb-Shaped PSJ Structure on Current Collapse in Source-Connected GaN Polarization Superjunction FETs

〇Eito Kokubo1, Hirotaka Watanabe2, Manato Deki3, Atsushi Tanaka2, Yoshio Honda2,3,4, Hiroshi Amano2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.D center Nagoya Univ., 4.IAR Nagoya Univ.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[8a-A21-8]TCAD analysis of forward current–voltage characteristics for GaN vertical JBS diodes to evaluate drift layer electron mobility

〇Kazuki Kitagawa1, Tsutomu Uesugi2, Masahiro Horita1,2, Tetsu Kachi2, Jun Suda1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A21-9]Investigation of Deep Vertical Mesa Structures for High-Voltage Operation of Vertical HVPE-GaN p–n Diodes

〇Takashi Murayama1, Chihiro Nishiwaki1, Shunsuke Ide1, Ryoma Ito1, Miyu Tsutsumi1, Shunya Hirayama1, Taichi Marushige1, Ko Nakaya1, Naoki Fujimoto2, Atsushi Tanaka2, Yoshio Honda2,3,4, Hiroshi Amano2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Deep Tech Serial Innovation Center, Nagoya Univ., 4.IAR, Nagoya Univ.)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A21-10]Impact of Device Isolation Method on Off-State Leakage Current in GaN PSJ-FETs

〇Seiji Ishimoto1, Atsushi Tanaka1, Eito Kokubo2, Yoshio Honda1,3,4, Hiroshi Amano1,3,4 (1.Nagoya Univ. IMaSS, 2.Nagoya Univ., 3.Nagoya Univ. D center, 4.Nagoya Univ. IAR)
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