[8a-A21-1~10] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A21-9] Investigation of Deep Vertical Mesa Structures for High-Voltage Operation of Vertical HVPE-GaN p–n Diodes

〇Takashi Murayama¹, Chihiro Nishiwaki¹, Shunsuke Ide¹, Ryoma Ito¹, Miyu Tsutsumi¹, Shunya Hirayama¹, Taichi Marushige¹, Ko Nakaya¹, Naoki Fujimoto², Atsushi Tanaka², Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Deep Tech Serial Innovation Center, Nagoya Univ., 4.IAR, Nagoya Univ.)

Keywords:

semiconductor,HVPE,GaN power devices

HVPE enables the growth of thick and lightly doped GaN drift layers and is therefore promising for high-voltage vertical GaN power devices. In this study, a 50-µm-deep vertical mesa structure was applied to HVPE-GaN vertical p–n diodes using an electroplated Ni mask, focusing on the influence of mesa sidewalls as a possible breakdown-limiting factor. A breakdown voltage exceeding 2.3 kV was achieved. However, the measured breakdown voltage remained below the theoretical value, suggesting the presence of additional factors limiting the breakdown performance even with the deep vertical mesa structure.