[8a-A33-1~11] 17.1 Growth, Assembly, Structure control

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[8a-A33-1] CVD-MoS₂ film formation from PVD-Mo film via oxygen and sulfur-vapor anneals

〇Shunsuke Nozawa¹, Naoki Matsunaga¹, Jaehyo Jang¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹ (1.Science Tokyo)

Keywords:

molybdenum disulfide,transition metal dichalcogenide,chemical vapor deposition

MoS₂ is attracting attention as a potential channel material for future FETs. Although sputtering using MoS₂ targets, which offer high industrial applicability, has been studied as a film deposition method, electrical properties comparable to those achieved by exfoliation or CVD methods have not been obtained yet. Therefore, in this study, we investigated a method (3-step CVD method) in which a Mo film formed by sputtering is oxidized by oxygen annealing and finally converted into a MoS₂ film by sulfur atmosphere annealing, and back-gate FETs are fabricated.