[8a-A33-1~11] 17.1 Growth, Assembly, Structure control

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A33-10] Analysis of ripple-induced friction anisotropy domains and crystal orientation visualization in monolayer MoS₂ by lateral force microscopy

〇Kosei Matsumoto¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Yoshiki Sakuma², Kosuke Nagashio¹ (1.UTokyo, 2.NIMS)

Keywords:

LFM,MoS2,MOCVD

Recently, we demonstrated the highly accurate, transfer-free quantitative analysis of sulfur vacancies on the topmost surface of MOCVD-grown monolayer MoS₂ on insulating sapphire substrates using lateral force microscopy (LFM). Additionally, LFM clearly distinguishes sapphire step-terrace structures and MoS₂ grain boundaries, both of which are challenging to identify by conventional topographic imaging. Utilizing these capabilities, this study conducts LFM observations from the macro to atomic-scale, aiming to extend these capabilities to large-area crystal domain analysis and the elucidation of crystal growth mechanisms.