Presentation Information
[8a-A33-2]PVD-MoS2 channel FET device using Ar post-anneal
〇Naoki Matsunaga1, JAEHYO JANG1, Shunsuke Nozawa1, Taiga Fuse1, Soma Ito1, Hitoshi Wakabayashi1 (1.Science Tokyo)
Keywords:
Molybdenum disulfide,Crystallinity improvement,Field-effect transistor
Sputtering, which enables large-area deposition, has attracted attention as a method for depositing MoS2, a material expected to be used in next-generation semiconductors. However, the poor crystallinity after deposition remains a challenge. Sulfur-vapor annealing (SVA), a conventional method for further improving the crystallinity of sputter-deposited films, proved to be insufficient compared to CVD films. Therefore, in this study, an annealing in an Ar atmosphere following SVA was performed as an approach to significantly improve the crystallinity of PVD films. Furthermore, top-gate FETs were fabricated and their electrical characteristics were evaluated.