[8a-A33-1~11] 17.1 Growth, Assembly, Structure control

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-A33-3] Wafer-scale Fabrication of Multi-layer MoS₂ Thin Film

〇Myeongok Kim¹, Okada Yoshitaka¹ (1.RCAST, UTokyo)

Keywords:

MoS2,Scalable deposition,Reactive sputtering

Multi-layer transition metal dichalcogenides (TMDCs) have suitable optical and electrical properties as a solar cell light absorber, but their applications have been limited due to the difficulty in fabricating large-area multilayer TMDCs. This research, therefore, demonstrates wafer-scale multi-layer MoS₂ film fabrication by reactive sputtering for its potential application as a light absorber. 8 nm thick MoS₂ thin film sputtered on 2-inch size sapphire wafer showed (002) plane X-ray diffraction peak, indicating lateral growth, and showed characteristic A, B, and C exciton absorption spectra of MoS₂. A film as thin as 8 nm still showed maximum absorptivity of 38 % in the visible wavelength range.