[8a-E218-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[8a-E218-10] Temperature Dependence of Electron Spin Relaxation Time in GaAs/AlGaAs (110) Quantum Wells

〇Fuminari Tsuboi¹, Taiyo Yamamoto¹, Satoshi Iba², Yuzo Ohno^1,2 (1.Univ. of Tsukuba, 2.AIST)

Keywords:

Semiconductor spintronics,spin relaxation

To enhance the performance of spin vertical-cavity surface-emitting lasers (spin-VCSELs), which are promising next-generation light sources for optical communications, a quantitative understanding of electron spin relaxation in the active region is essential. In this study, we investigated the temperature dependence of the electron spin relaxation time in GaAs/AlGaAs (110) quantum wells with a well width of 15 nm using time-resolved photoluminescence spectroscopy. By comparing the experimental results with theoretical calculations that consider individual spin relaxation mechanisms, we analyzed the contributions of the respective mechanisms to the overall spin relaxation process and discuss the factors responsible for the observed non-monotonic temperature dependence of the spin relaxation time.