[8a-E218-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[8a-E218-11] Experimental evaluation of the Dresselhaus coefficient in (110) GaAs/AlGaAl quantum wells from room-temperature spin relaxation

〇Taiyo Yamamoto¹, Fuminari Tsuboi¹, Satoshi Iba², Yuzo Ohno^1,2 (1.Univ. of Tsukuba, 2.AIST)

Keywords:

Semiconductor Spintronics,Spin relaxation

(110) GaAs/AlGaAs quantum well structures are known as promising candidates for the active layer of spin lasers because they exhibit long spin relaxation times τ_s, which are a key performance indicator. Recent studies have shown that the Dresselhaus coefficient γ_D, which is used for the quantitative evaluation of τ_s in bulk GaAs, is not the conventional value of approximately 20 eVų but rather around 10 eVų. Motivated by this finding, we investigated the excitation intensity dependence of τ_s and performed a quantitative evaluation of γ_D in this structure. Although the value γ_D ≈ 10 eVų yielded good agreement with the experimental results overall, the calculated spin relaxation time τ_s tended to become shorter than the experimental values in the low electron density regime.