[8a-E218-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[8a-E218-7] Temperature-Dependent Photoluminescence Decay Time Properties of InAs/InGaAlAs/InP Quantum Dot Ensembles with Different Areal Densities

〇(M2)Sora KAWAMOTO Kawamoto^1,2, Kouich Akahane², Shinya Yamada², Satoshi Shinada², Tomohiro Maeda^1,2, Hideyuki Sotobayashi¹ (1.Aogaku Univ., 2.NICT)

Keywords:

semiconductor,quantum dots

In this study, temperature-dependent time-resolved PL measurements were performed on quantum dot (QD) samples with different areal densities to clarify carrier dynamics in semiconductor QDs. By comparing QD samples with markedly different areal densities, we aimed to gain insight into emission processes that are difficult to identify in measurements of QDs with typical densities. The results showed that the increase in PL lifetime persisted to higher temperatures in the low-density QD sample.